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• 14:23, 27 November 2022 Admin talk contribs deleted page इन्सुलेटेड गेट बाइपोलर ट्रांसिस्टर (content was: "{{short description|Type of solid state switch}} {{Infobox electronic component | name = Insulated-gate bipolar transistor | image = IGBT 3300V 1200A Mitsubishi.jpg | caption = IGBT module (IGBTs and freewheeling diodes) with a rated current of 1200 A and a maximum voltage of 3300 V | type = | working_principle = Semiconductor | invented = 1959 | first_produced = | pins = | symbol...")