File:Power die.svg
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Original file (SVG file, nominally 500 × 225 pixels, file size: 21 KB)
Summary
| Description |
English: Aproximative dimensions and structure of a power semiconductor die. This is a 3-terminal device, with two terminals on the top (the emitter and base for a BJT, the gate and emitter for an IGBT, the source and gate for a power MOSFET). The remaining terminal (respectively collector, collector and drain) is on the back. |
| Date | Modified 2010-02-03 |
| Source | Own work |
| Author |
Cyril Buttay
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Licensing
I, the copyright holder of this work, hereby publish it under the following licences:
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Permission is granted to copy, distribute and/or modify this document under the terms of the GNU Free Documentation Licence, Version 1.2 or any later version published by the Free Software Foundation; with no Invariant Sections, no Front-Cover Texts, and no Back-Cover Texts. A copy of the licence is included in the section entitled GNU Free Documentation Licence. |
  
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This file is licensed under the Creative Commons Attribution-Share Alike 3.0 Unported licence. | |
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| This licensing tag was added to this file as part of the GFDL licensing update. |
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File history
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| Date/Time | Thumbnail | Dimensions | User | Comment | |
|---|---|---|---|---|---|
| current | 23:02, 3 February 2010 |  | 500 × 225 (21 KB) | wikimediacommons>Inductiveload | fixed text, resize to 500px and simplify paths |
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